
N-Channel PowerTrench® MOSFET featuring 60V drain-to-source breakdown voltage and 4.1mΩ maximum drain-to-source resistance. This single element transistor offers a continuous drain current of 21.5A and a maximum power dissipation of 127W. Designed for surface mounting in a DPAK package, it operates across a temperature range of -55°C to 150°C. Key switching characteristics include a 6.9ns fall time, 26ns turn-on delay, and 31ns turn-off delay. RoHS compliant and lead-free.
Onsemi FDD86540 technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 21.5A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 5mR |
| Drain to Source Voltage (Vdss) | 60V |
| Element Configuration | Single |
| Fall Time | 6.9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 6.34nF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 127W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 127W |
| Radiation Hardening | No |
| Rds On Max | 4.1mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 31ns |
| Turn-On Delay Time | 26ns |
| Weight | 0.26037g |
| Width | 6.22mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDD86540 to view detailed technical specifications.
No datasheet is available for this part.
