N-Channel MOSFET, 30V Drain-Source Voltage (Vdss), 5.7mΩ Max Drain-Source On-Resistance (Rds On Max), and 17A Continuous Drain Current (ID). This surface mount component features a TO-252AA package, 80W Max Power Dissipation, and operates within a temperature range of -55°C to 175°C. It offers fast switching characteristics with a 9ns Turn-On Delay Time and 41ns Fall Time. Designed for automotive applications and AEC-Q101 qualified, it is supplied in tape and reel packaging with 2500 units per reel.
PackageTO-252AA
MountingSurface Mount
PolarityN-CHANNEL
Power80W
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Technical Specifications
Onsemi FDD8896-F085 technical specifications.
General
Package/Case
TO-252AA
Continuous Drain Current (ID)
17A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
5.7mR
Drain to Source Voltage (Vdss)
30V
Element Configuration
Single
Fall Time
41ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
2.525nF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
80W
Mount
Surface Mount
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
80W
Radiation Hardening
No
Rds On Max
5.7mR
RoHS Compliant
Yes
Series
Automotive, AEC-Q101, PowerTrench®
Turn-Off Delay Time
53ns
Turn-On Delay Time
9ns
Weight
0.26037g
Compliance
RoHS
Compliant
Datasheet
Onsemi FDD8896-F085 Datasheet
Download the complete datasheet for Onsemi FDD8896-F085 to view detailed technical specifications.
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