N-channel Power MOSFET featuring 500V drain-source voltage and 6.5A continuous drain current. This UniFET II series component offers a low 850mΩ Rds On, with fast switching characteristics including 17ns turn-on delay and 27ns fall time. Encased in a surface-mount DPAK package, it operates from -55°C to 150°C with a maximum power dissipation of 90W.
PackageDPAK
MountingSurface Mount
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Technical Specifications
Onsemi FDD8N50NZTM technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 6.5A |
| Drain to Source Voltage (Vdss) | 500V |
| Element Configuration | Single |
| Fall Time | 27ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 2.39mm |
| Input Capacitance | 735pF |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 90W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 850mR |
| RoHS Compliant | Yes |
| Series | UniFET-II™ |
| Turn-Off Delay Time | 43ns |
| Turn-On Delay Time | 17ns |
| Weight | 0.26037g |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDD8N50NZTM Datasheet
Download the complete datasheet for Onsemi FDD8N50NZTM to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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