The FDFMA2P859T is a P-CHANNEL junction field-effect transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 3A and a drain to source breakdown voltage of -20V. The device is surface mount and has a maximum power dissipation of 1.4W. It is RoHS compliant and has a package quantity of 3000 units per reel.
MountingSurface Mount
PolarityP-CHANNEL
Power1.4W
Quick Jump:
Technical Specifications
Onsemi FDFMA2P859T technical specifications.
General
| Continuous Drain Current (ID) | 3A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 120mR |
| Drain to Source Voltage (Vdss) | 20V |
| Element Configuration | Single |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 435pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.4W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.4W |
| Radiation Hardening | No |
| Rds On Max | 120mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 9ns |
| Weight | 0.04g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDFMA2P859T Datasheet
Download the complete datasheet for Onsemi FDFMA2P859T to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.