N-Channel PowerTrench® MOSFET and Schottky Diode, surface mount, 30V Drain to Source Breakdown Voltage, 1.8A Continuous Drain Current, and 299mΩ Drain to Source Resistance. Features include 75pF Input Capacitance, 2.8ns Fall Time, 6ns Turn-On Delay Time, and 22ns Turn-Off Delay Time. Operating temperature range from -55°C to 150°C with 1.4W Max Power Dissipation. Packaged on 5000-REEL tape and reel.
Onsemi FDFME3N311ZT technical specifications.
| Continuous Drain Current (ID) | 1.8A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 299mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 2.8ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.55mm |
| Input Capacitance | 75pF |
| Length | 1.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.4W |
| Mount | Surface Mount |
| Nominal Vgs | 1V |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.1W |
| Radiation Hardening | No |
| Rds On Max | 299mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 22ns |
| Turn-On Delay Time | 6ns |
| Weight | 0.0252g |
| Width | 1.6mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDFME3N311ZT to view detailed technical specifications.
No datasheet is available for this part.
