The FDFMJ2P023Z is a P-CHANNEL MOSFET with a breakdown voltage of 20V and a continuous drain current of 2.9A. It has a maximum operating temperature range of -55°C to 150°C and a maximum power dissipation of 1.4W. The device is surface mount and RoHS compliant. It features a PowerTrench design and has a maximum drain to source resistance of 112mR.
Onsemi FDFMJ2P023Z technical specifications.
| Continuous Drain Current (ID) | 2.9A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 112mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 4ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 400pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.4W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.4W |
| Radiation Hardening | No |
| Rds On Max | 112mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 5ns |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDFMJ2P023Z to view detailed technical specifications.
No datasheet is available for this part.