
P-Channel MOSFET with integrated Schottky diode, featuring a -30V drain-source breakdown voltage and a continuous drain current of 3A. This surface-mount component offers a low drain-source on-resistance of 115mΩ. Designed for efficient switching, it exhibits turn-on delay of 7ns and turn-off delay of 18ns, with a fall time of 31ns. Operating across a temperature range of -55°C to 150°C, it is packaged in SOIC for tape and reel distribution.
Onsemi FDFS2P753Z technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3A |
| Current Rating | -3A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 115mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 115MR |
| Element Configuration | Single |
| Fall Time | 31ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 1.575mm |
| Input Capacitance | 455pF |
| Lead Free | Lead Free |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.6W |
| Radiation Hardening | No |
| Rds On Max | 115mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | -2.1V |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 7ns |
| DC Rated Voltage | -30V |
| Weight | 0.2304g |
| Width | 3.9mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDFS2P753Z to view detailed technical specifications.
No datasheet is available for this part.