N-channel MOSFET, 30V drain-source breakdown voltage, 6A continuous drain current, and 35mΩ maximum drain-source on-resistance. Features a 1.7V threshold voltage, 350pF input capacitance, and 6ns fall time. Packaged in an 8-SOIC surface-mount case, this RoHS compliant component operates from -55°C to 150°C with a 2W power dissipation rating.
PackageSOIC
Current Rating6A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDFS6N303 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 6A |
| Current Rating | 6A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 35mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 350pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 35mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 1.7V |
| Turn-Off Delay Time | 13ns |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDFS6N303 Datasheet
Download the complete datasheet for Onsemi FDFS6N303 to view detailed technical specifications.
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