N-channel MOSFET with integrated Schottky diode, featuring 30V drain-source breakdown voltage and 7A continuous drain current. Offers a low 23mΩ maximum drain-source on-resistance. Designed for surface mount applications in an SOIC package, this component operates from -55°C to 150°C with a maximum power dissipation of 2W. Key electrical characteristics include a 2ns fall time and 6ns turn-on delay time.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power2W
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Technical Specifications
Onsemi FDFS6N548 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 23mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 23MR |
| Dual Supply Voltage | 30V |
| Element Configuration | Single |
| Fall Time | 2ns |
| Forward Current | 2mA |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 700pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Nominal Vgs | 1.8V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 23mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 6ns |
| Weight | 0.187g |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDFS6N548 Datasheet
Download the complete datasheet for Onsemi FDFS6N548 to view detailed technical specifications.
No datasheet is available for this part.