
N-Channel PowerTrench® MOSFET with integrated Schottky diode, 30V drain-source breakdown voltage, 4A continuous drain current, and 56mΩ maximum drain-source on-resistance. This surface-mount SOIC package component features a 1.7V nominal gate-source threshold voltage and 2ns fall time. Operating temperature range from -55°C to 150°C with 2W maximum power dissipation. RoHS compliant and lead-free.
Onsemi FDFS6N754 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4A |
| Current Rating | 4A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 42mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 56MR |
| Dual Supply Voltage | 30V |
| Element Configuration | Single |
| Fall Time | 2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 299pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Nominal Vgs | 1.7V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 56mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Termination | SMD/SMT |
| Threshold Voltage | 1.7V |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 6ns |
| DC Rated Voltage | 30V |
| Weight | 0.2304g |
| Width | 4mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDFS6N754 to view detailed technical specifications.
No datasheet is available for this part.
