N-Channel JFET transistor for surface mount applications. Features a 25V drain-source voltage and 950mA continuous drain current. Offers a maximum drain-source on-resistance of 450mΩ. Operates within a temperature range of -55°C to 150°C. Includes a 3ns turn-on delay and 17ns turn-off delay. Packaged in tape and reel.
PackageSC
Current Rating950mA
MountingSurface Mount
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Technical Specifications
Onsemi FDG313N technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 950mA |
| Current Rating | 950mA |
| Drain to Source Voltage (Vdss) | 25V |
| Drain-source On Resistance-Max | 450mR |
| Element Configuration | Single |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1mm |
| Input Capacitance | 50pF |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 750mW |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 450mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 800mV |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 3ns |
| DC Rated Voltage | 25V |
| Weight | 0.028g |
| Width | 1.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDG313N Datasheet
Download the complete datasheet for Onsemi FDG313N to view detailed technical specifications.
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