
N-Channel Logic Level MOSFET, designed for surface mount applications. Features a 30V drain-source breakdown voltage and a continuous drain current of 2A. Offers a low drain-source on-resistance of 120mΩ at a nominal gate-source voltage of 1.8V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 750mW. Packaged in tape and reel, this RoHS compliant component has a fall time of 11ns and turn-off delay of 7ns.
Onsemi FDG315N technical specifications.
| Package/Case | SC |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 100mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 120MR |
| Dual Supply Voltage | 30V |
| Element Configuration | Single |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 220pF |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 750mW |
| Mount | Surface Mount |
| Nominal Vgs | 1.8V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 750mW |
| Radiation Hardening | No |
| Rds On Max | 120mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Termination | SMD/SMT |
| Threshold Voltage | 1.8V |
| Turn-Off Delay Time | 7ns |
| Turn-On Delay Time | 3ns |
| DC Rated Voltage | 30V |
| Weight | 0.028g |
| Width | 1.25mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDG315N to view detailed technical specifications.
No datasheet is available for this part.
