P-Channel Logic Level MOSFET, designed for surface mounting in an SC package. Features a -30V drain-source breakdown voltage and a continuous drain current of 1.6A. Offers a maximum drain-source on-resistance of 190mΩ at a gate-source voltage of -1.6V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 750mW. Includes fast switching characteristics with turn-on delay time of 8ns and fall time of 9ns.
PackageSC
Current Rating1.6A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FDG316P technical specifications.
General
Package/Case
SC
Continuous Drain Current (ID)
1.6A
Current Rating
1.6A
Drain to Source Breakdown Voltage
-30V
Drain to Source Resistance
160mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
190MR
Element Configuration
Single
Fall Time
9ns
Gate to Source Voltage (Vgs)
20V
Height
1mm
Input Capacitance
165pF
Lead Free
Lead Free
Length
2mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
750mW
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
750mW
Radiation Hardening
No
Rds On Max
190mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Threshold Voltage
-1.6V
Turn-Off Delay Time
14ns
Turn-On Delay Time
8ns
DC Rated Voltage
30V
Weight
0.028g
Width
1.25mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDG316P Datasheet
Download the complete datasheet for Onsemi FDG316P to view detailed technical specifications.
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