
P-Channel Logic Level MOSFET, designed for surface mounting in an SC package. Features a -30V drain-source breakdown voltage and a continuous drain current of 1.6A. Offers a maximum drain-source on-resistance of 190mΩ at a gate-source voltage of -1.6V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 750mW. Includes fast switching characteristics with turn-on delay time of 8ns and fall time of 9ns.
Onsemi FDG316P technical specifications.
| Package/Case | SC |
| Continuous Drain Current (ID) | 1.6A |
| Current Rating | 1.6A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 160mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 190MR |
| Element Configuration | Single |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 165pF |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 750mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 750mW |
| Radiation Hardening | No |
| Rds On Max | 190mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | -1.6V |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 8ns |
| DC Rated Voltage | 30V |
| Weight | 0.028g |
| Width | 1.25mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDG316P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
