The FDG326P is a P-channel MOSFET with a continuous drain current of 1.5A and a drain to source breakdown voltage of -20V. It features a drain to source resistance of 140mR and a gate to source voltage of 8V. The device is packaged in a SC package and is suitable for surface mount applications. The operating temperature range is -55°C to 150°C, and the maximum power dissipation is 750mW. The FDG326P is RoHS compliant and lead free.
PackageSC
Current Rating-1.5A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FDG326P technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 1.5A |
| Current Rating | -1.5A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 140mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 467pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 750mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 750mW |
| Rds On Max | 140mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 18ns |
| DC Rated Voltage | -20V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDG326P Datasheet
Download the complete datasheet for Onsemi FDG326P to view detailed technical specifications.
No datasheet is available for this part.
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