P-Channel MOSFET, single element configuration, designed for surface mount applications. Features a -20V Drain to Source Breakdown Voltage and a continuous drain current of 1.5A. Offers a maximum on-resistance of 145mΩ at a Vgs of 2.5V. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 750mW. Packaged in tape and reel, this RoHS compliant component is ideal for power management circuits.
PackageSC
Current Rating-1.5A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FDG328P technical specifications.
General
Package/Case
SC
Continuous Drain Current (ID)
1.5A
Current Rating
-1.5A
Drain to Source Breakdown Voltage
-20V
Drain to Source Resistance
120mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
145MR
Element Configuration
Single
Fall Time
12ns
Gate to Source Voltage (Vgs)
12V
Height
1mm
Input Capacitance
337pF
Lead Free
Lead Free
Length
2mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
750mW
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
750mW
Radiation Hardening
No
Rds On Max
145mR
RoHS Compliant
Yes
Series
PowerTrench®
Turn-Off Delay Time
10ns
Turn-On Delay Time
9ns
DC Rated Voltage
-20V
Weight
0.028g
Width
1.25mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDG328P Datasheet
Download the complete datasheet for Onsemi FDG328P to view detailed technical specifications.
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