
P-Channel MOSFET, single element, surface mount in SC package. Features -12V drain-source breakdown voltage, -2A continuous drain current, and 110mΩ drain-source resistance. Operates with 8V gate-source voltage and 750mW max power dissipation. Includes 477pF input capacitance and fast switching times with 10ns turn-on and 11ns fall times. RoHS compliant and lead-free.
Onsemi FDG330P technical specifications.
| Package/Case | SC |
| Continuous Drain Current (ID) | 2A |
| Current Rating | -2A |
| Drain to Source Breakdown Voltage | -12V |
| Drain to Source Resistance | 110mR |
| Drain to Source Voltage (Vdss) | 12V |
| Element Configuration | Single |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1mm |
| Input Capacitance | 477pF |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 750mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 750mW |
| Radiation Hardening | No |
| Rds On Max | 110mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | -700mV |
| Turn-Off Delay Time | 12ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | -12V |
| Weight | 0.028g |
| Width | 1.25mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDG330P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
