P-Channel MOSFET, single element, surface mount in SC package. Features -12V drain-source breakdown voltage, -2A continuous drain current, and 110mΩ drain-source resistance. Operates with 8V gate-source voltage and 750mW max power dissipation. Includes 477pF input capacitance and fast switching times with 10ns turn-on and 11ns fall times. RoHS compliant and lead-free.
PackageSC
Current Rating-2A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FDG330P technical specifications.
General
Package/Case
SC
Continuous Drain Current (ID)
2A
Current Rating
-2A
Drain to Source Breakdown Voltage
-12V
Drain to Source Resistance
110mR
Drain to Source Voltage (Vdss)
12V
Element Configuration
Single
Fall Time
11ns
Gate to Source Voltage (Vgs)
8V
Height
1mm
Input Capacitance
477pF
Lead Free
Lead Free
Length
2mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
750mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
750mW
Radiation Hardening
No
Rds On Max
110mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Threshold Voltage
-700mV
Turn-Off Delay Time
12ns
Turn-On Delay Time
10ns
DC Rated Voltage
-12V
Weight
0.028g
Width
1.25mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDG330P Datasheet
Download the complete datasheet for Onsemi FDG330P to view detailed technical specifications.
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