Dual N-Channel JFET featuring 25V drain-source breakdown voltage and 220mA continuous drain current. Offers 4Ω maximum drain-source on resistance. This surface mount component has a 1.25mm width, 2mm length, and 1mm height, with a 300mW power dissipation. Includes 4.5ns fall time and 5ns turn-on delay time.
PackageSC
Current Rating220mA
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDG6301N technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 220mA |
| Current Rating | 220mA |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 4R |
| Drain to Source Voltage (Vdss) | 25V |
| Drain-source On Resistance-Max | 4R |
| Dual Supply Voltage | 25V |
| Element Configuration | Dual |
| Fall Time | 4.5ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1mm |
| Input Capacitance | 9.5pF |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Rds On Max | 4R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Threshold Voltage | 850mV |
| Turn-Off Delay Time | 4ns |
| Turn-On Delay Time | 5ns |
| DC Rated Voltage | 25V |
| Weight | 0.028g |
| Width | 1.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDG6301N Datasheet
Download the complete datasheet for Onsemi FDG6301N to view detailed technical specifications.
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