The FDG6301N_Q is a N-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a drain to source breakdown voltage of 25V and a continuous drain current of 220mA. The device has a power dissipation of 300mW and a drain to source resistance of 4 ohms. The FDG6301N_Q is packaged in tape and reel format and has a gate to source voltage of 8V.
PolarityN-CHANNEL
Power300mW
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Technical Specifications
Onsemi FDG6301N_Q technical specifications.
General
| Continuous Drain Current (ID) | 220mA |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 4R |
| Fall Time | 4.5ns |
| Gate to Source Voltage (Vgs) | 8V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 300mW |
| Turn-Off Delay Time | 4ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDG6301N_Q Datasheet
Download the complete datasheet for Onsemi FDG6301N_Q to view detailed technical specifications.
No datasheet is available for this part.