Dual N-Channel JFET with 25V drain-source breakdown voltage and 500mA continuous drain current. Features 450mΩ drain-source resistance (Rds On Max) and 8V gate-source voltage. This surface mount device offers fast switching with a 3ns turn-on delay and 8.5ns fall time. Operates from -55°C to 150°C with 300mW power dissipation. Supplied in a 3000-piece tape and reel package.
PackageSC
Current Rating500mA
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDG6303N technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 500mA |
| Current Rating | 500mA |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 450mR |
| Drain to Source Voltage (Vdss) | 25V |
| Dual Supply Voltage | 25V |
| Element Configuration | Dual |
| Fall Time | 8.5ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1mm |
| Input Capacitance | 50pF |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Nominal Vgs | 800mV |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Rds On Max | 450mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Threshold Voltage | 800mV |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 3ns |
| DC Rated Voltage | 25V |
| Weight | 0.028g |
| Width | 1.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDG6303N Datasheet
Download the complete datasheet for Onsemi FDG6303N to view detailed technical specifications.
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