Dual N-Channel JFET with 25V drain-source breakdown voltage and 500mA continuous drain current. Features 450mΩ drain-source resistance (Rds On Max) and 8V gate-source voltage. This surface mount device offers fast switching with a 3ns turn-on delay and 8.5ns fall time. Operates from -55°C to 150°C with 300mW power dissipation. Supplied in a 3000-piece tape and reel package.
PackageSC
Current Rating500mA
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDG6303N technical specifications.
General
Package/Case
SC
Continuous Drain Current (ID)
500mA
Current Rating
500mA
Drain to Source Breakdown Voltage
25V
Drain to Source Resistance
450mR
Drain to Source Voltage (Vdss)
25V
Dual Supply Voltage
25V
Element Configuration
Dual
Fall Time
8.5ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
8V
Height
1mm
Input Capacitance
50pF
Lead Free
Lead Free
Length
2mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300mW
Mount
Surface Mount
Nominal Vgs
800mV
Number of Elements
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
300mW
Radiation Hardening
No
Rds On Max
450mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Threshold Voltage
800mV
Turn-Off Delay Time
17ns
Turn-On Delay Time
3ns
DC Rated Voltage
25V
Weight
0.028g
Width
1.25mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDG6303N Datasheet
Download the complete datasheet for Onsemi FDG6303N to view detailed technical specifications.
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