Dual P-Channel Junction Field-Effect Transistor (JFET) designed for digital applications. Features a maximum drain-source voltage of -20V and a continuous drain current of 500mA. Offers a low drain-source on-resistance of 780mΩ. This surface-mount component is packaged in SC, with dimensions of 2mm (length) x 1.25mm (width) x 1mm (height). Operates within a temperature range of -55°C to 150°C and boasts a power dissipation of 300mW.
PackageSC
Current Rating-500mA
MountingSurface Mount
Power300mW
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Technical Specifications
Onsemi FDG6318P technical specifications.
General
Package/Case
SC
Continuous Drain Current (ID)
500mA
Current Rating
-500mA
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
780MR
Element Configuration
Dual
Fall Time
1ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
12V
Height
1mm
Input Capacitance
83pF
Lead Free
Lead Free
Length
2mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300mW
Mount
Surface Mount
Number of Elements
2
Package Quantity
1
Packaging
Tape and Reel
Power Dissipation
300mW
Rds On Max
780mR
RoHS Compliant
Yes
Series
PowerTrench®
Turn-Off Delay Time
13ns
Turn-On Delay Time
6ns
DC Rated Voltage
-20V
Weight
0.028g
Width
1.25mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDG6318P Datasheet
Download the complete datasheet for Onsemi FDG6318P to view detailed technical specifications.
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