The FDG6331L_Q is a single N-channel MOSFET with a drain to source resistance of 260mR and a gate to source voltage of 8V. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 300mW. The device is available in tape and reel packaging with a quantity of 15000 units. It is designed to handle an output current of 800mA and an operating supply voltage of 8V.
Power300mW
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Technical Specifications
Onsemi FDG6331L_Q technical specifications.
General
| Drain to Source Resistance | 260mR |
| Gate to Source Voltage (Vgs) | 8V |
| Max Input Voltage | 8V |
| Min Input Voltage | 2.5V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Number of Outputs | 1 |
| Operating Supply Voltage | 8V |
| Output Current | 800mA |
| Package Quantity | 15000 |
| Packaging | Tape and Reel |
| Power Dissipation | 300mW |
| Series | FDG6331L |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDG6331L_Q Datasheet
Download the complete datasheet for Onsemi FDG6331L_Q to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.