N-Channel PowerTrench® MOSFET, dual element configuration, featuring a 20V drain-source breakdown voltage and 700mA continuous drain current. Offers a maximum drain-source on-resistance of 300mΩ. Operates with a 12V gate-source voltage and a threshold voltage of 1.1V. Includes fast switching characteristics with turn-on delay of 5ns and fall time of 7ns. Packaged in a surface-mount SC case, 3000 units per tape and reel.
PackageSC
Current Rating700mA
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDG6335N technical specifications.
General
Package/Case
SC
Continuous Drain Current (ID)
700mA
Current Rating
700mA
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
300mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
300MR
Element Configuration
Dual
Fall Time
7ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
12V
Height
1mm
Input Capacitance
113pF
Lead Free
Lead Free
Length
2mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300mW
Mount
Surface Mount
Number of Elements
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
300mW
Radiation Hardening
No
Rds On Max
300mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Threshold Voltage
1.1V
Turn-Off Delay Time
9ns
Turn-On Delay Time
5ns
DC Rated Voltage
20V
Weight
0.028g
Width
1.25mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDG6335N Datasheet
Download the complete datasheet for Onsemi FDG6335N to view detailed technical specifications.
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