N-Channel PowerTrench® MOSFET, dual element configuration, featuring a 20V drain-source breakdown voltage and 700mA continuous drain current. Offers a maximum drain-source on-resistance of 300mΩ. Operates with a 12V gate-source voltage and a threshold voltage of 1.1V. Includes fast switching characteristics with turn-on delay of 5ns and fall time of 7ns. Packaged in a surface-mount SC case, 3000 units per tape and reel.
PackageSC
Current Rating700mA
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDG6335N technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 700mA |
| Current Rating | 700mA |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 300mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 300MR |
| Element Configuration | Dual |
| Fall Time | 7ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1mm |
| Input Capacitance | 113pF |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Rds On Max | 300mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | 1.1V |
| Turn-Off Delay Time | 9ns |
| Turn-On Delay Time | 5ns |
| DC Rated Voltage | 20V |
| Weight | 0.028g |
| Width | 1.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDG6335N Datasheet
Download the complete datasheet for Onsemi FDG6335N to view detailed technical specifications.
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