Complementary N and P-Channel MOSFETs for surface mount applications. Features 25V drain-source breakdown voltage and 400mR drain-source on-resistance. Operates with a nominal gate-source voltage of 1V, offering a 1V threshold voltage. Includes 120pF input capacitance and 16ns fall time, with a maximum power dissipation of 360mW. Packaged in a 3000-piece tape and reel.
PackageSC
MountingSurface Mount
PolarityP-CHANNEL
Power360mW
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Technical Specifications
Onsemi FDG8842CZ technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 750mA |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 1.1R |
| Drain to Source Voltage (Vdss) | 25V |
| Drain-source On Resistance-Max | 400MR |
| Dual Supply Voltage | 30V |
| Fall Time | 16ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | -8V |
| Height | 1mm |
| Input Capacitance | 120pF |
| Length | 2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Nominal Vgs | 1V |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 360mW |
| Rds On Max | 400mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Termination | SMD/SMT |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 35ns |
| Weight | 0.028g |
| Width | 1.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDG8842CZ Datasheet
Download the complete datasheet for Onsemi FDG8842CZ to view detailed technical specifications.
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