N-Channel UltraFET Power MOSFET featuring 55V drain-to-source breakdown voltage and 75A continuous drain current. This through-hole mounted component offers a low 7mΩ drain-to-source resistance and a maximum power dissipation of 375W. Operating across a -55°C to 175°C temperature range, it boasts a 2.9V threshold voltage and fast switching characteristics with a 13.7ns turn-on delay and 22ns fall time. Packaged in a TO-247 3L, this RoHS compliant MOSFET is suitable for demanding applications.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power375W
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Technical Specifications
Onsemi FDH5500-F085 technical specifications.
General
Package/Case
TO-247
Continuous Drain Current (ID)
75A
Drain to Source Breakdown Voltage
55V
Drain to Source Resistance
7mR
Drain to Source Voltage (Vdss)
55V
Element Configuration
Single
Fall Time
22ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
3.565nF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
375W
Mount
Through Hole
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
375W
Radiation Hardening
No
Rds On Max
7mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
Automotive, AEC-Q101, UltraFET™
Threshold Voltage
2.9V
Turn-Off Delay Time
34ns
Turn-On Delay Time
13.7ns
Weight
6.39g
Compliance
RoHS
Compliant
Datasheet
Onsemi FDH5500-F085 Datasheet
Download the complete datasheet for Onsemi FDH5500-F085 to view detailed technical specifications.
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