
N-channel power MOSFET featuring a 60V drain-source breakdown voltage and a maximum continuous drain current of 265A. This through-hole component offers a low 2.5mΩ drain-source on-resistance and a maximum power dissipation of 395W. Designed for efficient switching, it exhibits a fall time of 250ns and a turn-off delay time of 348ns. Packaged in a TO-262-3 configuration, this lead-free and RoHS compliant transistor operates across a wide temperature range from -55°C to 175°C.
Onsemi FDI025N06 technical specifications.
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 265A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 2.5mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 2.5MR |
| Element Configuration | Single |
| Fall Time | 250ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 14.885nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 395W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 395W |
| Rds On Max | 2.5mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 348ns |
| Weight | 2.387g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDI025N06 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.