N-Channel PowerTrench® MOSFET featuring 60V drain-source breakdown voltage and 193A continuous drain current. This single element transistor offers a low 3.2mΩ Rds On resistance and a maximum power dissipation of 231W. Designed for through-hole mounting in a TO-262-3 package, it operates across a wide temperature range from -55°C to 175°C. Key switching characteristics include a 39ns turn-on delay and 33ns fall time.
PackageTO-262-3
MountingThrough Hole
PolarityN-CHANNEL
Power231W
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Technical Specifications
Onsemi FDI030N06 technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 193A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Voltage (Vdss) | 60V |
| Element Configuration | Single |
| Fall Time | 33ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 9.815nF |
| Length | 10.29mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 231W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 231W |
| Radiation Hardening | No |
| Rds On Max | 3.2mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 54ns |
| Turn-On Delay Time | 39ns |
| Weight | 2.387g |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDI030N06 Datasheet
Download the complete datasheet for Onsemi FDI030N06 to view detailed technical specifications.
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