The FDI047AN08A0 is a N-CHANNEL Power MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a drain to source breakdown voltage of 75V and a drain to source resistance of 4mR. The device is packaged in a TO-262-3 package and is mounted through a hole. It is RoHS compliant and has a maximum power dissipation of 310W.
PackageTO-262-3
Current Rating80A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDI047AN08A0 technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 80A |
| Current Rating | 80A |
| Drain to Source Breakdown Voltage | 75V |
| Drain to Source Resistance | 4mR |
| Drain to Source Voltage (Vdss) | 75V |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 6.6nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 310W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 310W |
| Rds On Max | 4.7mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 40ns |
| DC Rated Voltage | 75V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDI047AN08A0 Datasheet
Download the complete datasheet for Onsemi FDI047AN08A0 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.