N-channel enhancement mode power MOSFET featuring a 100V drain-source voltage and 57A continuous drain current. This single-element transistor is housed in a TO-262 package with a 3-pin through-hole configuration and a tab. Key specifications include a maximum drain-source on-resistance of 16 mOhm at 10V, typical gate charge of 53 nC, and typical input capacitance of 3580 pF at 25V. Maximum power dissipation is 110W, with an operating temperature range of -55°C to 150°C.
PackageTO-262
MountingThrough Hole
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Technical Specifications
Onsemi FDI150N10 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | I2PAK |
| Package/Case | TO-262 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.29(Max) |
| Package Width (mm) | 4.83(Max) |
| Package Height (mm) | 9.65(Max) |
| Seated Plane Height (mm) | 11.05(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-262AA |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 57A |
| Maximum Drain Source Resistance | 16@10VmOhm |
| Typical Gate Charge @ Vgs | 53@10VnC |
| Typical Gate Charge @ 10V | 53nC |
| Typical Input Capacitance @ Vds | 3580@25VpF |
| Maximum Power Dissipation | 110000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 5V1P1 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Onsemi FDI150N10 Datasheet
Download the complete datasheet for Onsemi FDI150N10 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.