The FDI8441 is a single N-channel power MOSFET with a breakdown voltage of 40V and a continuous drain current of 26A. It has a maximum power dissipation of 300W and a drain to source resistance of 2.7 ohms. The device is packaged in a TO-262-3 case and is suitable for through-hole mounting. The FDI8441 operates over a temperature range of -55°C to 175°C and is compliant with RoHS regulations.
PackageTO-262-3
MountingThrough Hole
PolarityN-CHANNEL
Power300W
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Technical Specifications
Onsemi FDI8441 technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 26A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 2.7R |
| Drain to Source Voltage (Vdss) | 40V |
| Element Configuration | Single |
| Fall Time | 17.9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 15nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Package Quantity | 400 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Rds On Max | 2.7mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 75ns |
| Turn-On Delay Time | 23ns |
| Weight | 2.084g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDI8441 Datasheet
Download the complete datasheet for Onsemi FDI8441 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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