P-CHANNEL Power Field-Effect Transistor, featuring a 20V Drain to Source Breakdown Voltage and 160mR Drain to Source Resistance. This dual element MOSFET offers a 2.8A Continuous Drain Current and a 13ns Fall Time, with a Gate to Source Voltage of 8V. Packaged in SC for surface mounting, it operates from -55°C to 150°C and has a maximum power dissipation of 1.5W.
PackageSC
Current Rating-2.8A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FDJ1027P technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 2.8A |
| Current Rating | -2.8A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 160mR |
| Drain to Source Voltage (Vdss) | 20V |
| Dual Supply Voltage | -20V |
| Element Configuration | Dual |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 290pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Mount | Surface Mount |
| Nominal Vgs | -800mV |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.5W |
| Rds On Max | 160mR |
| Reach SVHC Compliant | No |
| Series | PowerTrench® |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 13ns |
| DC Rated Voltage | -20V |
| Weight | 0.096g |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDJ1027P Datasheet
Download the complete datasheet for Onsemi FDJ1027P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.