N and P-Channel Junction Field-Effect Transistor (JFET) for small signal applications. Features a 20V Drain to Source Breakdown Voltage (Vdss) and a maximum continuous drain current of 3.2A. Offers a low Drain to Source Resistance (Rds On Max) of 90mR and a fast fall time of 13ns. Packaged in SC for surface mounting, this lead-free, RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 1.5W.
PackageSC
Current Rating3.2A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FDJ1032C technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 3.2A |
| Current Rating | 3.2A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 108mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 13ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 200pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Mount | Surface Mount |
| Nominal Vgs | 1V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.5W |
| Rds On Max | 90mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 13ns |
| Weight | 0.096g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDJ1032C Datasheet
Download the complete datasheet for Onsemi FDJ1032C to view detailed technical specifications.
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