N and P-Channel Junction Field-Effect Transistor (JFET) for small signal applications. Features a 20V Drain to Source Breakdown Voltage (Vdss) and a maximum continuous drain current of 3.2A. Offers a low Drain to Source Resistance (Rds On Max) of 90mR and a fast fall time of 13ns. Packaged in SC for surface mounting, this lead-free, RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 1.5W.
PackageSC
Current Rating3.2A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FDJ1032C technical specifications.
General
Package/Case
SC
Continuous Drain Current (ID)
3.2A
Current Rating
3.2A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
108mR
Drain to Source Voltage (Vdss)
20V
Fall Time
13ns
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
8V
Input Capacitance
200pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
900mW
Mount
Surface Mount
Nominal Vgs
1V
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1.5W
Rds On Max
90mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Turn-Off Delay Time
13ns
Weight
0.096g
Compliance
RoHS
Compliant
Datasheet
Onsemi FDJ1032C Datasheet
Download the complete datasheet for Onsemi FDJ1032C to view detailed technical specifications.
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