The FDM606P is a P-channel MOSFET with a drain to source breakdown voltage of -20V and a continuous drain current of 6.8A. It has a maximum power dissipation of 1.92W and is packaged in a surface mount package. The device operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations. The FDM606P features a low Rds on max of 30mR and a fast turn-off delay time of 134ns.
PackageSMD/SMT
Current Rating-6.8A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FDM606P technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 6.8A |
| Current Rating | -6.8A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 26mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 46ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 2.2nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.92W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.92W |
| Rds On Max | 30mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 134ns |
| DC Rated Voltage | -20V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDM606P Datasheet
Download the complete datasheet for Onsemi FDM606P to view detailed technical specifications.
No datasheet is available for this part.