P-Channel MOSFET with -30V drain-source breakdown voltage and -6.8A continuous drain current. Features 35mΩ maximum drain-source on-resistance at a nominal Vgs of 10V. Operates with a gate-source voltage up to 25V, exhibiting a turn-on delay of 6ns and fall time of 31ns. This surface-mount component offers a maximum power dissipation of 2.4W and is supplied in a 3000-piece tape and reel package.
Current Rating-6.8A
MountingSurface Mount
PolarityP-CHANNEL
Power2.4W
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Technical Specifications
Onsemi FDMA530PZ technical specifications.
General
Continuous Drain Current (ID)
6.8A
Current Rating
-6.8A
Drain to Source Breakdown Voltage
-30V
Drain to Source Resistance
35mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
35MR
Dual Supply Voltage
-30V
Element Configuration
Single
Fall Time
31ns
Gate to Source Voltage (Vgs)
25V
Height
0.75mm
Input Capacitance
1.07nF
Lead Free
Lead Free
Length
2mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.4W
Mount
Surface Mount
Nominal Vgs
25V
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
2.4W
Rds On Max
35mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Termination
SMD/SMT
Threshold Voltage
-2.1V
Turn-Off Delay Time
43ns
Turn-On Delay Time
6ns
DC Rated Voltage
-30V
Weight
0.03g
Width
2mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDMA530PZ Datasheet
Download the complete datasheet for Onsemi FDMA530PZ to view detailed technical specifications.
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