P-Channel PowerTrench® MOSFET featuring a -20V Drain to Source Breakdown Voltage and a continuous drain current of 9.4A. This single-element transistor offers a low 20mΩ Drain to Source Resistance (Rds On Max) and a maximum power dissipation of 2.4W. Designed for surface mounting, it operates within a temperature range of -55°C to 150°C and includes a threshold voltage of -500mV. The component is RoHS compliant and packaged in tape and reel.
MountingSurface Mount
PolarityP-CHANNEL
Power2.4W
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Technical Specifications
Onsemi FDMA910PZ technical specifications.
General
Continuous Drain Current (ID)
9.4A
Drain to Source Breakdown Voltage
-20V
Drain to Source Resistance
20mR
Drain to Source Voltage (Vdss)
20V
Element Configuration
Single
Fall Time
103ns
Gate to Source Voltage (Vgs)
8V
Height
0.75mm
Input Capacitance
2.805nF
Lead Free
Lead Free
Length
2mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.4W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
2.4W
Radiation Hardening
No
Rds On Max
20mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Threshold Voltage
-500mV
Turn-Off Delay Time
135ns
Turn-On Delay Time
9.4ns
Weight
0.03g
Width
2mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDMA910PZ Datasheet
Download the complete datasheet for Onsemi FDMA910PZ to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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