Dual N-Channel Power Trench® MOSFET featuring 25V drain-to-source breakdown voltage and 7.0A continuous drain current. Offers a low 23mΩ drain-to-source resistance (Rds On Max) and 1.6W power dissipation. Designed for surface mount applications with a compact 3mm x 1.9mm x 0.75mm package, supplied on a 3000-piece tape and reel. Includes fast switching characteristics with turn-on delay of 6ns and fall time of 3ns.
MountingSurface Mount
PolarityN-CHANNEL
Power1.6W
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Technical Specifications
Onsemi FDMB3900AN technical specifications.
General
| Continuous Drain Current (ID) | 7A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 23mR |
| Drain to Source Voltage (Vdss) | 25V |
| Element Configuration | Dual |
| Fall Time | 3ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.75mm |
| Input Capacitance | 890pF |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 800mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.6W |
| Radiation Hardening | No |
| Rds On Max | 23mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 6ns |
| Weight | 6E-05g |
| Width | 1.9mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDMB3900AN Datasheet
Download the complete datasheet for Onsemi FDMB3900AN to view detailed technical specifications.
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