
P-Channel MOSFET featuring -60V drain-source breakdown voltage and 13.5A continuous drain current. Offers a low 100mΩ maximum drain-source on-resistance at a 10V gate-source voltage. Designed for surface mount applications with a compact 3mm x 3mm footprint and 1.055nF input capacitance. Operates across a wide temperature range of -55°C to 150°C with a maximum power dissipation of 42W. This RoHS compliant component is supplied in tape and reel packaging.
Onsemi FDMC5614P technical specifications.
| Continuous Drain Current (ID) | 13.5A |
| Current Rating | -5.7A |
| Drain to Source Breakdown Voltage | -60V |
| Drain to Source Resistance | 84mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 100MR |
| Element Configuration | Single |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.95mm |
| Input Capacitance | 1.055nF |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 42W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.1W |
| Radiation Hardening | No |
| Rds On Max | 100mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | -1.95V |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | -60V |
| Weight | 0.2g |
| Width | 3mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDMC5614P to view detailed technical specifications.
No datasheet is available for this part.