
Dual N-Channel MOSFET, 20V Drain-Source Voltage, 4A Continuous Drain Current. Features 67mΩ maximum Drain-Source On-Resistance and 1.78W maximum Power Dissipation. Surface mount package with 3mm length, 3mm width, and 0.75mm height. Operates from -55°C to 150°C, with 12ns fall time and 4ns turn-on delay. Packaged on a 3000-piece tape and reel.
Onsemi FDMC6890NZ technical specifications.
| Continuous Drain Current (ID) | 4A |
| Current Rating | 4A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 67mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 12ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.75mm |
| Input Capacitance | 270pF |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.78W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.92W |
| Radiation Hardening | No |
| Rds On Max | 68mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 7ns |
| Turn-On Delay Time | 4ns |
| DC Rated Voltage | 20V |
| Weight | 0.16533333g |
| Width | 3mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDMC6890NZ to view detailed technical specifications.
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