N-Channel Power Trench® MOSFET featuring 30V drain-source breakdown voltage and 20A continuous drain current. Offers low on-resistance of 5.7mΩ at a nominal Vgs of 1.9V. This single-element MOSFET is designed for surface mount applications with a compact 3.3mm x 3.3mm x 0.75mm footprint. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 2.3W. RoHS compliant and packaged in tape and reel for efficient assembly.
MountingSurface Mount
PolarityN-CHANNEL
Power2.3W
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Technical Specifications
Onsemi FDMC7672 technical specifications.
General
Continuous Drain Current (ID)
20A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
5.5mR
Drain to Source Voltage (Vdss)
30V
Element Configuration
Single
Fall Time
5ns
Gate to Source Voltage (Vgs)
20V
Height
0.75mm
Input Capacitance
3.89nF
Length
3.3mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.3W
Mount
Surface Mount
Nominal Vgs
1.9V
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.3W
Radiation Hardening
No
Rds On Max
5.7mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®, SyncFET™
Turn-Off Delay Time
31ns
Turn-On Delay Time
13ns
Weight
0.16533333g
Width
3.3mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDMC7672 Datasheet
Download the complete datasheet for Onsemi FDMC7672 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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