N-Channel Power Trench® MOSFET featuring 30V drain-source breakdown voltage and 20A continuous drain current. Offers low on-resistance of 5.7mΩ at a nominal Vgs of 1.9V. This single-element MOSFET is designed for surface mount applications with a compact 3.3mm x 3.3mm x 0.75mm footprint. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 2.3W. RoHS compliant and packaged in tape and reel for efficient assembly.
MountingSurface Mount
PolarityN-CHANNEL
Power2.3W
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Technical Specifications
Onsemi FDMC7672 technical specifications.
General
| Continuous Drain Current (ID) | 20A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 5.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.75mm |
| Input Capacitance | 3.89nF |
| Length | 3.3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.3W |
| Mount | Surface Mount |
| Nominal Vgs | 1.9V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.3W |
| Radiation Hardening | No |
| Rds On Max | 5.7mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench®, SyncFET™ |
| Turn-Off Delay Time | 31ns |
| Turn-On Delay Time | 13ns |
| Weight | 0.16533333g |
| Width | 3.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDMC7672 Datasheet
Download the complete datasheet for Onsemi FDMC7672 to view detailed technical specifications.
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