N-Channel Power Trench MOSFET, 20V Vdss, 16.5A continuous drain current, and 5mΩ Rds On. Features include 3.6mΩ drain-source resistance, 3.38nF input capacitance, and 7ns fall time. Operates from -55°C to 150°C with 2W maximum power dissipation. Surface mount package, lead-free, and RoHS compliant.
MountingSurface Mount
PolarityN-CHANNEL
Power2W
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Technical Specifications
Onsemi FDMC8554 technical specifications.
General
| Continuous Drain Current (ID) | 16.5A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 3.6mR |
| Drain to Source Voltage (Vdss) | 20V |
| Element Configuration | Single |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.95mm |
| Input Capacitance | 3.38nF |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 5mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 13ns |
| Weight | 0.16533333g |
| Width | 3mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDMC8554 Datasheet
Download the complete datasheet for Onsemi FDMC8554 to view detailed technical specifications.
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