N-Channel Power Trench® MOSFET, 30V Drain to Source Breakdown Voltage, 2.7mΩ Drain to Source Resistance, and 88A Continuous Drain Current. This single-element MOSFET features a low Rds On of 2.7mΩ and a maximum power dissipation of 54W. Designed for surface mount applications, it operates within a temperature range of -55°C to 150°C and is supplied in a 3000-piece tape and reel package. Key switching characteristics include a 20ns turn-on delay and an 8ns fall time.
MountingSurface Mount
PolarityN-CHANNEL
Power54W
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Technical Specifications
Onsemi FDMC86012 technical specifications.
General
| Continuous Drain Current (ID) | 23A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 2.7mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 5.075nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.3W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 54W |
| Radiation Hardening | No |
| Rds On Max | 2.7mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 43ns |
| Turn-On Delay Time | 20ns |
| Weight | 0.1527g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDMC86012 Datasheet
Download the complete datasheet for Onsemi FDMC86012 to view detailed technical specifications.
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