N-Channel Power Trench® MOSFET featuring 100V drain-source breakdown voltage and 103mΩ drain-source resistance. This single-element transistor offers a continuous drain current of 3.3A and a maximum power dissipation of 19W. Designed for surface mount applications, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 4.5ns turn-on delay and 1.4ns fall time. Packaged on tape and reel, this RoHS compliant component is lead-free.
MountingSurface Mount
PolarityN-CHANNEL
Power19W
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Technical Specifications
Onsemi FDMC86116LZ technical specifications.
General
| Continuous Drain Current (ID) | 3.3A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 103mR |
| Drain to Source Voltage (Vdss) | 100V |
| Element Configuration | Single |
| Fall Time | 1.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.75mm |
| Input Capacitance | 310pF |
| Lead Free | Lead Free |
| Length | 3.3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 19W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 19W |
| Radiation Hardening | No |
| Rds On Max | 103mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 10ns |
| Turn-On Delay Time | 4.5ns |
| Weight | 0.18g |
| Width | 3.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDMC86116LZ Datasheet
Download the complete datasheet for Onsemi FDMC86116LZ to view detailed technical specifications.
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