N-Channel MOSFET, 80V Vds, 48A ID, 6.5mΩ Rds On. Features Shielded Gate Power Trench® technology for enhanced performance. Single element configuration with a maximum power dissipation of 54W. Surface mount package, 3.4mm x 3.4mm x 0.75mm, supplied on a 3000-piece tape and reel. Operates from -55°C to 150°C.
MountingSurface Mount
PolarityN-CHANNEL
Power54W
Quick Jump:
Technical Specifications
Onsemi FDMC86340 technical specifications.
General
| Continuous Drain Current (ID) | 48A |
| Drain to Source Breakdown Voltage | 80V |
| Drain to Source Resistance | 8.5mR |
| Drain to Source Voltage (Vdss) | 80V |
| Element Configuration | Single |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.75mm |
| Input Capacitance | 3.885nF |
| Length | 3.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 54W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 54W |
| Radiation Hardening | No |
| Rds On Max | 6.5mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 20ns |
| Weight | 0.1527g |
| Width | 3.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDMC86340 Datasheet
Download the complete datasheet for Onsemi FDMC86340 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
