
30V N-Channel MOSFET featuring low Rds(on) of 5.9mR at 10V Vgs. This single element transistor offers a continuous drain current of 16A and a maximum power dissipation of 41W. Designed for surface mounting in a PQFN 3.3x3.3 8L package, it operates across a wide temperature range from -55°C to 150°C. The component boasts fast switching speeds with turn-on delay time of 9ns and fall time of 2ns. Packaged on a 3000-piece tape and reel, this RoHS compliant device is ideal for power management applications.
Onsemi FDMC8676 technical specifications.
| Continuous Drain Current (ID) | 16A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 5.9mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.935nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 41W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.3W |
| Radiation Hardening | No |
| Rds On Max | 5.9mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 22ns |
| Turn-On Delay Time | 9ns |
| Weight | 0.03213g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDMC8676 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
