Dual N-Channel PowerTrench® MOSFET, 100V Vdss, 21A continuous drain current. Features 20mΩ Rds On Max, 32mΩ Drain to Source Resistance, and 23W max power dissipation. Operates from -55°C to 150°C with a 20V Gate to Source Voltage. Surface mount package with 980pF input capacitance and 2.8ns fall time. Supplied on a 3000-piece tape and reel.
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Onsemi FDMD84100 technical specifications.
General
| Continuous Drain Current (ID) | 21A |
| Drain to Source Resistance | 32mR |
| Drain to Source Voltage (Vdss) | 100V |
| Element Configuration | Dual |
| Fall Time | 2.8ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.75mm |
| Input Capacitance | 980pF |
| Length | 5.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 23W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 20mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 8.4ns |
| Weight | 0.1534014g |
| Width | 3.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDMD84100 Datasheet
Download the complete datasheet for Onsemi FDMD84100 to view detailed technical specifications.
No datasheet is available for this part.