FDMD8530

Dual 30 V N-channel PowerTrench MOSFET integrates two matched devices in a 5 mm x 6 mm Power 5x6 package with the high-side source and low-side drain internally connected for half- and full-bridge layouts. Each MOSFET supports 201 A continuous drain current at TC = 25 °C and delivers up to 1.25 mΩ maximum RDS(on) at 10 V gate drive, with 1.5 mΩ maximum at 4.5 V. The device operates over a -55 °C to +150 °C junction temperature range and has a ±20 V gate-to-source rating. Low source inductance and Kelvin high-side MOSFET drive pin-out capability support synchronous dual, motor half-bridge, and synchronous rectification designs.