P-channel enhancement mode power MOSFET featuring a 20V drain-source voltage and 2.3A continuous drain current. This dual MOSFET is housed in a 6-pin UDFN EP micro dual flat package with an exposed pad, measuring 1.6mm x 1.6mm x 0.5mm. It offers a low on-resistance of 142mΩ at 4.5V Vgs and a typical gate charge of 5.5nC. Operating across a temperature range of -55°C to 150°C, this surface-mount component utilizes TMOS process technology.
PackageUDFN EP
MountingSurface Mount
Quick Jump:
Technical Specifications
Onsemi FDME1023PZT technical specifications.
General
| Basic Package Type | Non-Lead-Frame SMT |
| Package Family Name | DFN |
| Package/Case | UDFN EP |
| Package Description | Micro Dual Flat Package No Lead, Exposed Pad |
| Lead Shape | No Lead |
| Pin Count | 6 |
| PCB | 6 |
| Package Length (mm) | 1.6 |
| Package Width (mm) | 1.6 |
| Package Height (mm) | 0.5(Max) |
| Seated Plane Height (mm) | 0.55(Max) |
| Pin Pitch (mm) | 0.5 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Dual |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 2 |
| Process Technology | TMOS |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Source Voltage | ±8V |
| Maximum Continuous Drain Current | 2.3A |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | 305@10VpF |
| Maximum Power Dissipation | 1400mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 5V1P1 |
| EU RoHS | Yes |
| HTS Code | 8541210095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Onsemi FDME1023PZT Datasheet
Download the complete datasheet for Onsemi FDME1023PZT to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.