P-Channel PowerTrench® MOSFET featuring -20V drain-source breakdown voltage and 8A continuous drain current. Offers a low 24mΩ drain-source resistance (Rds On Max) and 2.1W power dissipation. Designed for surface mount applications with a compact 1.6mm x 1.6mm x 0.5mm footprint, packaged on tape and reel. Fast switching characteristics include a 9ns turn-on delay and 46ns fall time. Operates across a wide temperature range from -55°C to 150°C.
MountingSurface Mount
PolarityP-CHANNEL
Power2.1W
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Technical Specifications
Onsemi FDME910PZT technical specifications.
General
| Continuous Drain Current (ID) | 8A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 24mR |
| Drain to Source Voltage (Vdss) | 20V |
| Element Configuration | Single |
| Fall Time | 46ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.5mm |
| Input Capacitance | 2.11nF |
| Lead Free | Lead Free |
| Length | 1.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 700mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.1W |
| Radiation Hardening | No |
| Rds On Max | 24mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 87ns |
| Turn-On Delay Time | 9ns |
| Weight | 0.03g |
| Width | 1.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDME910PZT Datasheet
Download the complete datasheet for Onsemi FDME910PZT to view detailed technical specifications.
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