Asymmetric dual N-channel MOSFET for power applications. Features 25V drain-to-source breakdown voltage and 38A continuous drain current. Offers low on-resistance of 5.5mR at 10V Vgs. Surface mountable with a compact 6.1mm x 5.1mm x 1.05mm footprint. Operates from -55°C to 150°C, with 2.5W power dissipation. RoHS compliant and lead-free.
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Onsemi FDMS3620S technical specifications.
General
| Continuous Drain Current (ID) | 38A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 5.5mR |
| Drain to Source Voltage (Vdss) | 25V |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.05mm |
| Input Capacitance | 1.57nF |
| Lead Free | Lead Free |
| Length | 5.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 4.7mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 41ns |
| Weight | 0.09g |
| Width | 6.1mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDMS3620S Datasheet
Download the complete datasheet for Onsemi FDMS3620S to view detailed technical specifications.
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