P-Channel PowerTrench® MOSFET featuring a -30V drain-source breakdown voltage and a continuous drain current of 18A. This surface mount component offers a low 20mΩ drain-source resistance (Rds On Max) and a maximum power dissipation of 39W. Key switching characteristics include a 9ns turn-on delay time and a 19ns fall time. Operating across a wide temperature range from -55°C to 150°C, this RoHS compliant MOSFET is supplied in tape and reel packaging.
MountingSurface Mount
PolarityN-CHANNEL
Power39W
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Technical Specifications
Onsemi FDMS4435BZ technical specifications.
General
Continuous Drain Current (ID)
18A
Drain to Source Breakdown Voltage
-30V
Drain to Source Resistance
20mR
Drain to Source Voltage (Vdss)
30V
Element Configuration
Single
Fall Time
19ns
Gate to Source Voltage (Vgs)
25V
Height
1.05mm
Input Capacitance
2.05nF
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
39W
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
39W
Radiation Hardening
No
Rds On Max
20mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Threshold Voltage
-1.9V
Turn-Off Delay Time
35ns
Turn-On Delay Time
9ns
Weight
0.074g
Width
6mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDMS4435BZ Datasheet
Download the complete datasheet for Onsemi FDMS4435BZ to view detailed technical specifications.
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