
P-Channel PowerTrench® MOSFET featuring a -30V drain-source breakdown voltage and a continuous drain current of 18A. This surface mount component offers a low 20mΩ drain-source resistance (Rds On Max) and a maximum power dissipation of 39W. Key switching characteristics include a 9ns turn-on delay time and a 19ns fall time. Operating across a wide temperature range from -55°C to 150°C, this RoHS compliant MOSFET is supplied in tape and reel packaging.
Onsemi FDMS4435BZ technical specifications.
| Continuous Drain Current (ID) | 18A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 20mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 1.05mm |
| Input Capacitance | 2.05nF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 39W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 39W |
| Radiation Hardening | No |
| Rds On Max | 20mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | -1.9V |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 9ns |
| Weight | 0.074g |
| Width | 6mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDMS4435BZ to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
