P-Channel MOSFET, single element configuration, offering a -30V drain-to-source breakdown voltage and 6.8mΩ drain-to-source resistance. Features a continuous drain current of 15.2A and a maximum power dissipation of 73W. Operates within a temperature range of -55°C to 150°C, with a threshold voltage of -1.8V. This surface mount component is packaged in tape and reel, is RoHS compliant, and utilizes PowerTrench® technology.
MountingSurface Mount
PolarityP-CHANNEL
Power2.5W
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Technical Specifications
Onsemi FDMS6673BZ technical specifications.
General
Continuous Drain Current (ID)
15.2A
Drain to Source Breakdown Voltage
-30V
Drain to Source Resistance
6.8mR
Drain to Source Voltage (Vdss)
30V
Element Configuration
Single
Fall Time
79ns
Gate to Source Voltage (Vgs)
25V
Height
1.05mm
Input Capacitance
5.915nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
73W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
6.8mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Threshold Voltage
-1.8V
Turn-Off Delay Time
97ns
Turn-On Delay Time
14ns
Weight
0.0681g
Width
6mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDMS6673BZ Datasheet
Download the complete datasheet for Onsemi FDMS6673BZ to view detailed technical specifications.
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